Late paper with recent results will be considered for poster presentation.  

Late papers due: Latest 20th February 2016

2 page abstracts should be submitted at This email address is being protected from spambots. You need JavaScript enabled to view it.

Please use the following templates: MAM2016 abstract template pdf or MAM2016 abstract template wordfile

 

Papers are solicited in the following areas:

Materials and Processes
- Metallization for advanced interconnects; local interconnects; contacts; metal gates; through silicon via’s
- Dielectric isolation; porous ULK; hybrid materials; pore sealing; pore stuffing; MOF, patterning; cleaning; restoration; surface functionalization
- Metal or dielectric liners for diffusion barriers; etch-stop; capping
- Deposition PVD; CVD; ALD; ELD; ECD; SAMs, reflow; e-beam
- Planarization; CMP; slurry; pad; anti-corrosion methods
- Device integration and novel architectures; local interconnects
- Silicides and germanides
- III-V materials for power and LED applications
- Materials for memories
- Nanomaterials for graphene; carbon nanotubes; nanowires; nanodots
- Packaging materials and technologies; bonding

Advanced Characterization and Modeling techniques
- Analytical techniques; defect inspection; x-ray/electron tomography; spectroscopy; microscopy; scanning probe methods
- Reliability and failure analysis; lifetime extrapolation methodologies
- Modeling and simulation of: process steps; CPI; equipment; interconnect systems; material properties

Nanoscale applications
- Alternative interconnects; optical and wireless systems
- 3D integration; COW, WOW; thinning; bonding; TSV; micro-bump
- System-on-chip and system-in-package
- Memories devices (MRAM; FeRAM; CBRAM; PCRAM, ReRAM)
- Advanced devices: single electron device; tunnel FET
- Flexible Electronics, Energy harvesting/storage; MEMS/NEMS