Program overview (subject to chnage).

 

 


Registration open

(only registration no tutorials or presentations)

 
 
 
Monday 21st
 
08u30:08u45


Welcome, C.J. Wilson, Imec and C. Detavernier Ghent University

 Executive Keynote
08u45:09u20
 
Advanced Metallization: Enabling the Continuation of Scaling, Dave Hemker, Lam Research

 Executive Keynote
09u20:09u55
 
New Materials Enabling the Mobility EraSundar Ramamurthy, Applied Materials

 09u55:10u25 Coffee break

 Dielectrics

Session Chairs: A. Cockburn,  Applied Materials, J.-F. de Marneffe, Imec

 Invited
10u25:11u00 

SiOCH Thin Films Deposited By CVD: From Low-K To Chemical And Biochemical Sensors, Vincent Jousseaume, CEA Letti, France

 10u25:11u25
Ultralow dielectric constant nanoporous SiOCH films deposited by plasma-enhanced chemical vapor deposition, Zi-Jun Ding, Fudan University, China

 11u25:11u50
Gemini-templated PMO low-k films, M. Redzheb, Ugent, Belgium

 11u50:12u15
Cryogenic etching of porous low-k dielectrics in CF3Br plasma, Askar Rezvanov, Moscow Institute of Physics and Technology, Russia

 12u15:12u40
Integration aspects of post-porosity low-k protection using PMMA sacrificial filler, Liping Zhang, imec, Belgium

 12u40:13u40 Lunch

 Characterization and Reliability 1

Session Chairs: O. Thomas, Aix-Marseille Université-CNRS and S. Armini, Imec

 Invited
13u40:14u15

Advanced characterization methods for materials properties of composite BEoL stacks for multi-scale simulation, Christoph Sander, Fraunhofer IKTS Dresden, Germany

 14u15:14u40
Determination of thermal expansion coefficients of low-k dielectrics by cube corner indentation tests at elevated temperatures, Kris Vanstreels, imec, Belgium

14u40:15u05 
Substrate independent mechanical properties of thin low dielectric constant materials, Oguzhan Orkut Okudur, KULeuven, Belgium

 15u05:15u30
Mechanically conscious design of airgaps in nano-interconnects, Houman Zahedmanesh, imec, Belgium

 15u30:16u00 Break

 Characterization and Reliability 2

Session Chairs: O. Thomas, Aix-Marseille Université-CNRS and S. Armini, Imec

 16u00:16u25
Electro-mechanical based failure criteria for flexible electronics, Megan Cordill, Erich Schmid Institute, Austria

 16u25:16u50  
Fatigue behavior of thin-film power copper on silicon substrate under cyclic bending conditions, S. Hartl, Erich Schmid Institute, Austria

 16u50:17u15
Strain distribution induced in SOI photonic substrate by TSVs advanced scanning X-ray nano-diffraction, B. Vianne, Aix-Marseille Univeristé, France

 17u15:17u40
Dielectrics Stability for Intermediate BEOL in 3D Sequential Integration, Fabien Deprat, CEA Tech (Leti), France

 17u40:19u40 Posters and Reception
   

 Silicide and Contacts 1

Session Chairs: A. Vantomme, IKS - KU Leuven and S.-L. Zhang, Uppsala University Sweden

 Invited
08u30:09u05
 
Atomic Layer Deposition; an Enabling Technology for Metal Gate Integration in Three Dimensional Device Structures, Jerry Chen, ASM, USA

 09u05:09u30
Thermal stability of epitaxial GeSn and M-GeSn, N.M. Santos, KULeuven, Belgium

 09u30:09u55
Study of the formation and degradation of intermetallics formed by solid-state reaction of Ni on InGaAs, Seifeddine Zhiou, CEA Tech (Leti), France

 09u55:10u20


Significant Changes in Ni(Pt)Si Silicide Texture Observed Through ACOM-TEM Technique.
 M. Grégoire, STMicroelectronics, France

 10u20:10u50 Break

 Silicide and Contacts 2

Session Chairs: A. Vantomme, IKS - KU Leuven and S.-L. Zhang, Uppsala University Sweden

 10u50:11u15
Scalability study of nickel germanides, Lukas Jablonka, Uppsala Universitet, Sweden

 11u15:11u40
Formation of nickel silicides in the ultra-thin film regime', F.A. Geenen, Ugent, Belgium

 11u40:12u05
Growth of thick amorphous Ni-Si alloy in thin Ni silicide films due to nitrogen implantation, K. van Stiphout, KULeuven, Belgium

12u05:12u30 
Challenges of Ti-silicide contacts in advanced CMOS technologie, Nicolas Breil, Applied Materials, USA

 12u30:13u30 Lunch

 Memory

Session Chairs: L. Goux, Imec and K. Kurihara, Toshiba

  Invited
13u30:14u05

Opportunities and Challenges of CMP technology for 3D memories, Yukiteru Matsui, Toshiba, Japan

 14u05:14u30
Reaction between Ti and GeTe-based phase change material studied by combined in-situ x-ray diffraction, sheet resistance and atom probe tomography., Marion Descoins, IM2NP Aix-Marseille Université, France

14u30:14u55 
Interface barriers engineering by high work function metals in DRAM cells, Nadiia M. Kolomiiets, KULeuven, Belgium

 14u55:15u20
GaSb based phase change material with zero density change for phase change memory , Magali Putero, Aix-Marseille Univeristé, France

 15u20:15u45
Tuning the switching behavior of conductive-bridge resistive memory by the modulation of the cation-supplier alloys., Umberto Celano, KULeuven, Belgium

 15u45:16u15 Break

 3D Integration

Session Chairs: T. Ohba, Tokyo Institute of Technology Japan and S. Vyas, Intel

 Invited
16u15:16u50

Physics behind SmartCut™ process: from nano- to macro-scale, FRANCOIS RIEUTORD, CEA INAC-Grenoble, France

 16u50:17u15
Behavior of Copper Contamination on Backside Damage for Ultra-thin Silicon Three Dimensional Stacking Structure
, Yoriko Mizushima, Tokyo Institute of Technology, Japan

 17u15:17u40
Effect of Al doping on the performance of low temperature thin-film transistors with atomic-layer-deposited ZnO:Al channels, You-Hang Wang, Fudan University, China 

 17u40:18u05
Managing the evolution of copper-copper bonding energy at low temperature: application to Cu/SiO2 hybrid direct bonding, B. Imbert, CEA Tech (Leti), France

 Invited
18u05:18u40

Plasma-Assisted Atomic Layer Deposition for Back End-of-Line, Harm Knoops, Oxford Instruments Plasma Technology, United Kingdom

 18u40:19u30 Break
 19u30:22u30 Gala Dinner
   

 Novel device

Session Chairs: S. Maïtrejean, CEA - Leti Minatec – France and I. Asselberghs, Imec

 Invited
08u30:09u05

PZT thin film integration at wafer level for MEMS applications, Paolo Ferrarini, ST Agrate, Italy

 09u05:09u30
Surface-interface exploration of ultra-thin MgO oxide films grown onto Silicon substrate, Sébastien, Vizzini, IM2NP, France

 09u30:09u55
Impact of nanowire scaling on strained Si Gate-all-around Nanowire Schottky-Barrier MOSFETs, G.V. Luong, Peter-Grünberg-Institut, Germany

 09u55:10u20
Electrical Evaluation of Multilayer Graphene for Advanced Interconnects, Maria Politou, KULeuven, Belgium

 10u20:10u45
Modeling and tackling resistivity scaling in metallic nanowires, Kristof Moors, KULeuven, Belgium

 10u45:11u15 Break

 Metal and ALD 1

Session Chairs: C. Adelmann, Imec and M. Van der Veen, Imec

 Invited
11u15:11u50

Low Temperature, Thermal Atomic Layer Deposition of Transition Metal Films Using Strong Organic Reducing Precursors, Charles Winter, Wayne State University, USA

 11u50:12u15
Conformal Cu Electroless Seed on Co and Ru Liners enables Cu fill by plating for Advanced Interconnects, Marleen H. van der Veen, imec, Belgium

12u15:12u40 
CVD-CoxN for Advanced Semiconductor Metallization, Abitha Dhavamani, Fraunhofer IPMS, Germany

 12u40:13u05
Ru thin films deposited by atomic layer deposition using a new Ru precursor and various non-oxidizing reactants as a seed layer for Cu electroplating, Hyun-Jung Lee, Yeungnam University, Korea

 13u05:14u05 Lunch
 

 Metal and ALD 2

Session Chairs: C. Adelmann, Imec and M. Van der Veen, Imec

 Invited
14u05:14u40

Atomic Layer Etching Using Thermal Reactions:  ALD in Reverse, Steven M. George, University of Colorado, USA

 14u40:15u05
Growth of Ultrathin Cu Films Deposited by Atomic Layer Deposition for BEOL and other Nano Device Application, Stefan E. Schulz, Fraunhofer ENAS, Germany

 15u05:15u30
Thin, low roughness Ru films deposited by thermal and plasma enhanced atomic layer deposition using RuO4 and H2 at low temperatures, Matthias M. Minjauw, Ugent, Belgium

 15u30:15u55
Atomic Layer Deposition of Manganese Silicate as a Diffusion Barrier and Adhesion Layer for Interconnects, Roy G. Gordon, Harvard university, USA

 15u55:16u25 Break

Pannel: ALD for BEOL

Session Chairs: Suvi Haukka, ASM Microchemistry and Claudia Wiemer, IMM-CNR

16u25:17u55

Harm Knoops, Oxford Instruments Plasma Technology, UK
Paolo Ferrarini, ST Agrate, Italy
Charles Winter, Wayne State University, USA
Steven M. George, University of Colorado, USA